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BC817UPN Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BC817UPN Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 7 page 2007-04-20 3 BC817UPN DC current gain hFE = ƒ(IC) VCE = 1 V 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 A IC 1 10 2 10 3 10 105 °C 85 °C 65 °C 25 °C -40 °C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 0 10 EHP00223 BC 817/818 CEsat V 0.4 V 0.8 -1 100 101 3 10 5 5 Ι C mA 5 2 10 0.2 0.6 ˚C -50 25 ˚C 150 ˚C Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10 0 10 EHP00222 BC 817/818 BEsat V 2.0 V 4.0 -1 100 101 3 10 5 5 Ι C mA 5 2 10 1.0 3.0 ˚C -50 25 ˚C ˚C 150 Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 0 10 EHP00221 BC 817/818 A T 150 0 5 10 Ι CBO nA 50 100 1 10 2 10 4 10 ˚C typ max 103 |
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