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BCR116W Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # BCR116W
Description  NPN Silicon Digital Transistor
Download  14 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BCR116W Datasheet(HTML) 3 Page - Infineon Technologies AG

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2007-07-24
3
BCR116...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO
50
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO
50
-
-
Collector-base cutoff current
VCB = 40 V, IE = 0
ICBO
-
-
100
nA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO
-
-
155
µA
DC current gain1)
IC = 5 mA, VCE = 5 V
hFE
70
-
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat
-
-
0.3
V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.4
-
0.8
Input on voltage
IC = 2 mA, VCE = 0.3 V
Vi(on)
0.5
-
1.4
Input resistor
R1
3.2
4.7
6.2
k
Ω
Resistor ratio
R1/R2
0.09
0.1
0.11
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT
-
150
-
MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
3
-
pF
1Pulse test: t < 300µs; D < 2%


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