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BSC030P03NS3G Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSC030P03NS3G Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page BSC030P03NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-50 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA -6 V -15 V -24 V 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 -Q gate [nC] 26 28 30 32 34 36 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t AV [µs] Rev. 2.1 page 7 2009-11-16 |
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