BFP720

Product Brief

Data Sheet

8

Revision 1.0, 2009-01-20

2

Product Brief

The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in

a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low

operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable

battery-powered applications in which reduced power consumption is a key requirement. Collector design

supports operation voltages from 1.0 V to 4.0 V.

Table 1

Quick Reference DC Characteristics at

T

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Collector-emitter breakdown voltage

V

(BR)CEO

44.7

–

V

I

Collector-base breakdown voltage

V

(BR)CBO

13

15

–

V

I

Collector current

I

C

––

25

mA

Total power dissipation

P

tot

––

100

mW

T

DC current gain

h

FE

160

250

400

V