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BSD235N Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # BSD235N
Description  OptiMOS?? Small-Signal-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSD235N Datasheet(HTML) 7 Page - Infineon Technologies AG

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BSD235N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=16 Ω
V GS=f(Q gate); I D=0.95 A pulsed
parameter: T j(start)
parameter: V DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
16
17
18
19
20
21
22
23
24
25
-60
-20
20
60
100
140
T j [°C]
4 V
10 V
16 V
0
1
2
3
4
5
6
7
0
0.1
0.2
0.3
0.4
0.5
Q gate [nC]
25 °C
100 °C
125 °C
10
4
10
3
10
2
10
1
10
0
10
1
10
0
10
-1
10
-2
t AV [µs]
V GS
Q gate
V gs(th)
Q g(th)
Q gs
Q gd
Q sw
Q g
Rev 2.2
page 7
2010-03-26


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