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BSL214N Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSL214N Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 9 page  BSL214N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.5 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % 0 40 80 120 160 200 240 -60 -20 20 60 100 140 T j [°C] typ 98 % 2 % 0 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 T j [°C] Ciss Coss Crss 10 0 10 1 10 2 10 3 0 5 10 15 20 V DS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10 1 10 0 10 -1 10 -2 10 -3 0 0.4 0.8 1.2 1.6 V SD [V] Rev 2.2 page 6 2010-03-26 |
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