BSL308C datasheet(2/13 Pages) INFINEON

Part #	BSL308C

Description	OptiMOS??P3 Optimos??2 Small Signal Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 13 page

BSL308C

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

P

N

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

P V (BR)DSS V GS=0 V, I D=-250 µA

-

-30

V

N

V GS=0 V, I D=250 µA

30

-

Gate threshold voltage

P V GS(th)

V DS=V GS, I D=-11µA

-2

-1.5

-1

N

V DS=V GS, I D=11 µA

1.2

1.6

2

Zero gate voltage drain current

P I DSS

V DS=-30 V, V GS=0 V,

T j=25 °C

-

-1

µA

N

V DS=30 V, V GS=0 V,

T j=25 °C

--

1

P

V DS=-30 V, V GS=0 V,

T j=150 °C

-

-100

N

V DS=30 V, V GS=0 V,

T j=150 °C

-

100

Gate-source leakage current

P

N

P R DS(on)

V GS=-4.5 V,

I D=-1.7 A

-

88

130

m

Ω

N

V GS=4.5 V, I D=1.85 A

-67

93

P

V GS=-10 V,

I D=-2.0 A

-62

80

N

V GS=10 V, I D=2.3 A

-44

57

Transconductance

P g fs

|V DS|>2|I D|R DS(on)max,

I D=-1.6 A

-

4.6

-

S

N

|V DS|>2|I D|R DS(on)max,

I D=1.8 A

-5

-

±100

R thJA

nA

I GSS

-

V GS=±20 V, V DS=0 V

-

Values

2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides

of the PCB

Drain-source on-state

resistance

Thermal resistance, junction -

ambient

1)

-

250

minimal footprint

2)

K/W

Rev.2.0

page 2

2009-03-31

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