BSO083N03MSG datasheet(3/9 Pages) INFINEON

Part #	BSO083N03MSG

Description	OptiMOS?? M-Series Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSO083N03MS G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1600

2100

pF

Output capacitance

C oss

-

510

680

Reverse transfer capacitance

Crss

-33-

Turn-on delay time

t d(on)

-

9.4

-

ns

Rise time

t r

-5

-

Turn-off delay time

t d(off)

-

11.5

-

Fall time

t f

-

5.4

-

Gate Charge Characteristics

4)

Gate to source charge

Q gs

-

4.5

-

nC

Gate charge at threshold

Q g(th)

-

2.5

-

Gate to drain charge

Q gd

-

2.2

-

Switching charge

Q sw

-

4.2

-

Gate charge total

Q g

-

9.9

13

Gate plateau voltage

V plateau

-

2.9

-

V

Gate charge total

Q g

V DD=15 V, I D=14 A,

V GS=0 to 10 V

-21

27

nC

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

-

8.6

11.4

Output charge

Q oss

V DD=15 V, V GS=0 V

-

13.4

18

Reverse Diode

Diode continuous forward current

I S

--

3

A

Diode pulse current

I S,pulse

--

98

Diode forward voltage

V SD

V GS=0 V, I F=14 A,

T j=25 °C

-

0.85

1.1

V

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

-

10

nC

4) See figure 16 for gate charge parameter definition

T A=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=4.5 V,

I D=14 A, R G=1.6 Ω

V DD=15 V, I D=14 A,

V GS=0 to 4.5 V

Rev.1.1

page 3

2009-11-19

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