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BSO150N03 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSO150N03 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page BSO150N03 OptiMOS™2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC 1) for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit 10 secs steady state Continuous drain current I D T A=25 °C 2) 9.1 7.6 A T A=70 °C 2) 7.3 6.1 Pulsed drain current I D,pulse T A=25 °C 3) Avalanche energy, single pulse E AS I D=9.1 A, R GS=25 Ω mJ Reverse diode dv /dt dv /dt I D=9.1 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C 2) 2.0 1.4 W Operating and storage temperature T j, T stg °C IEC climatic category; DIN IEC 68-1 Value 55/150/56 -55 ... 150 ±20 6 82 36 V DS 30 V R DS(on),max 15 m Ω I D 9.1 A Product Summary PG-DSO-8 Type Package Marking BSO150N03 PG-DSO-8 150N3 Rev. 1.7 page 1 2010-05-11 |
Similar Part No. - BSO150N03_10 |
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Similar Description - BSO150N03_10 |
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