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BSP372 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSP372 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  BSP372 Rev 2.0 2 2008-03-31 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) RthJS ≤ 10 IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V(BR)DSS 100 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 0.8 1.4 2 Zero gate voltage drain current VDS = 100 V, VGS = 0 V, Tj = 25 ˚C VDS = 100 V, VGS = 0 V, Tj = 125 ˚C IDSS - - 10 0.1 100 1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 5 V, ID = 1.7 A RDS(on) - 0.24 0.31 Ω |
Similar Part No. - BSP372_08 |
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Similar Description - BSP372_08 |
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