IKW08T120 datasheet(4/16 Pages) INFINEON

Part #	IKW08T120

Description	Low Loss DuoPack : IGBT in TrenchStop짰 and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW08T120

TrenchStop® Series

Power Semiconductors

4

Rev. 2.3 Sep 08

Dynamic Characteristic

Input capacitance

Ciss

-

600

-

Output capacitance

Coss

-

36

-

Reverse transfer capacitance

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

28

-

pF

Gate charge

QGate

VCC=960V, IC=8A

VGE=15V

-

53

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE

-

13

-

nH

Short circuit collector current

1)

IC(SC)

VGE=15V,tSC

≤10µs

VCC = 600V,

Tj = 25

°C

-

48

-

A

Switching Characteristic, Inductive Load, at Tj=25

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

40

-

Rise time

tr

-

23

-

Turn-off delay time

td(off)

-

450

-

Fall time

tf

-

70

-

ns

Turn-on energy

Eon

-

0.67

-

Turn-off energy

Eoff

-

0.7

-

Total switching energy

Ets

Tj=25

°C,

VCC=600V,IC=8A,

VGE=0/15V,

RG=81

Ω,

Lσ

2) =180nH,

Cσ

2) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

1.37

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

80

-

ns

Diode reverse recovery charge

Qrr

-

1.0

-

µC

Diode peak reverse recovery current

Irrm

-

13

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=25

°C,

VR=600V, IF=8A,

diF/dt=600A/

µs

-

420

-

A/

µs

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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