SPB07N60C3 datasheet(1/13 Pages) INFINEON

Part #	SPB07N60C3

Description	New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2005-0

9-14

Rev. 2.

5

Page 1

SPB07N60C3

Cool MOS™ Power Transistor

VDS @ Tjmax

650

V

RDS(on)

0.6

Ω

ID

7.3

A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P

G-TO263

Marking

07N60C3

Type

Package

Ordering Code

SPB07N60C3

P

G-TO263

Q67040-S4394

Maximum Ratings

Parameter

Symbol

Value

Unit

SPB

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

7.3

4.6

A

Pulsed drain current, tp limited by Tjmax

ID puls

21.9

A

Avalanche energy, single pulse

ID=5.5A, VDD=50V

EAS

230

mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=7.3A, VDD=50V

EAR

0.5

Avalanche current, repetitive tAR limited by Tjmax

IAR

7.3

A

Gate source voltage static

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

83

W

Operating and storage temperature

Tj , Tstg

-55...+150

°C

Reverse diode dv/dt

dv/dt

15

V/ns

6)

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SPB07N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

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