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BSS816NW Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSS816NW Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page BSS816NW OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 1.4 A T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 3.7 mJ Reverse diode dv /dt dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±8 V Power dissipation 1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 0.5 PG-SOT323 2 3 1 Type Package Tape and Reel Information Marking Lead Free Packing BSS816NW PG-SOT323 L6327: 3000 pcs/ reel XCs Yes Non dry V DS 20 V R DS(on),max V GS=2.5 V 160 m Ω V GS=1.8 V 240 I D 1.4 A Product Summary Rev 2.2 page 1 2009-02-11 |
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