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BSZ440N10NS3G Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BSZ440N10NS3G
Description  OptiMOS?? Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSZ440N10NS3G Datasheet(HTML) 1 Page - Infineon Technologies AG

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BSZ440N10NS3 G
OptiMOS™3 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1) for target application
• Halogen-free according to IEC61249-2-21
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
T C=25 °C
18
A
T C=100 °C
11
T A=25 °C,
R thJA=50 K/W
2)
5.3
Pulsed drain current
3)
I D,pulse
T C=25 °C
72
Avalanche energy, single pulse
E AS
I D=12 A, R GS=25 Ω
17
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
T C=25 °C
29
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Value
V DS
100
V
R DS(on),max
44
m
Ω
I D
18
A
Product Summary
Type
Package
Marking
BSZ440N10NS3 G
PG-TDSON-8
440N10N
PG-TSDSON-8
Rev. 2.0
page 1
2010-04-26


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