SKB02N60_07 datasheet(2/13 Pages) INFINEON

Part #	SKB02N60

Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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SKB02N60

2

Rev. 2.2

Oct. 07

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

RthJC

4.2

Diode thermal resistance,

junction – case

RthJCD

7

SMD version, device on PCB

1)

RthJA

40

K/W

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V, IC=500µA

600

-

Collector-emitter saturation voltage

VCE(sat)

VGE = 15V, IC=2A

Tj=25°C

Tj=150°C

1.7

-

1.9

2.2

2.4

2.7

Diode forward voltage

VF

VGE=0V, IF=2.9A

Tj=25°C

Tj=150°C

1.2

-

1.4

1.25

1.8

1.65

Gate-emitter threshold voltage

VGE(th)

IC=150µA,VCE=VGE

3

4

5

V

Zero gate voltage collector current

ICES

VCE=600V,VGE=0V

Tj=25°C

Tj=150°C

-

20

250

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V, IC=2A

-

1.6

-

S

Dynamic Characteristic

Input capacitance

Ciss

-

142

170

Output capacitance

Coss

-

18

22

Reverse transfer capacitance

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

10

12

pF

Gate charge

QGate

VCC=480V, IC=2A

VGE=15V

-

14

18

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE

-

7

-

nH

Short circuit collector current

2)

IC(SC)

VGE=15V,tSC≤10µs

VCC ≤ 600V,

Tj ≤ 150°C

-

20

-

A

1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

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