IPS812-05B datasheet(2/4 Pages) IPS

Part #	IPS812-05B

Description	silicon controlled rectifiers

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Manufacturer	IPS [IP SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.ipsemiconductor.com

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ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)

Symbol

Test Condition

IPS812-xxB

Unit

05

15

IGT

Required DC gate current to trigger

MAX

5

15

mA

VGT

Required DC voltage to trigger

(anode supply = 6V, resistive load)

MAX

1.3

V

VGD

DC gate voltage not to trigger

(Tj = 110℃, VDRM = rated value)

MAX

0.2

V

IL

IG = 1.2 IGT

MAX

30

60

mA

IH

Holding current

MAX

15

30

mA

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

MIN

40

200

V/us

2

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j

– c)

Junction to case

TO-220B

2.8

℃/W

Symbol

Test Conditions

Value

(MAX)

Unit

VTM

ITM = 24A, tp = 380uS

Tj = 25℃

1.6

V

IDRM / IRRM

VD = VDRM

Tj = 25℃

5

uA

VR = VRRM

Tj = 125℃

2

mA

STATIC CHARACTERISTICS

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

IPS812-xxB

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IPS812-05B Datasheet(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD.

IPS812-05B Datasheet(HTML) 2 Page - IP SEMICONDUCTOR CO., LTD.

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