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SPA11N65C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPA11N65C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 15 page 200 7-08-30 Rev. 2. 9 Page 1 SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor V DS 650 V RDS(on) 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance PG-TO262 PG-TO220 FP PG-TO220 Marking 11N65C3 11N65C3 11N65C3 Type Package Ordering Code SPP11N65C3 PG-TO220 Q67040-S4557 SPA11N65C3 PG-TO220 FP SP000216318 SPI11N65C3 PG-TO262 Q67040-S4561 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 11 7 111) 71) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=2.5A, VDD=50V EAS 340 340 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4A, VDD=50V EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 4 4 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C |
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Similar Description - SPA11N65C3 |
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