BDP953 datasheet(3/8 Pages) INFINEON

Part #	BDP953

Description	Silicon NPN Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

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3

2009-05-28

BDP947, BDP949, BDP953

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BDP947

IC = 10 mA, IB = 0 , BDP949

IC = 10 mA, IB = 0 , BDP953

V(BR)CEO

45

60

100

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BDP947

IC = 100 µA, IE = 0 , BDP949

IC = 0 , IE = 100 µA, BDP953

V(BR)CBO

45

60

120

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 45 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

20

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain2)

IC = 10 mA, VCE = 5 V

IC = 500 mA, VCE = 1 V

IC = 2 A, VCE = 2 V, BDP947, BDP949

IC = 2 A, VCE = 2 V, BDP953

hFE

25

100

50

15

-

475

-

Collector-emitter saturation voltage2)

IC = 2 A, IB = 0.2 A

VCEsat

-

0.5

V

Base emitter saturation voltage2)

IC = 2 A, IB = 0.2 A

VBEsat

-

1.3

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

fT

-

100

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

25

-

pF

1For calculation of RthJA please refer to Application Note Thermal Resistance

2Pulse test: t < 300µs; D < 2%

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