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SPP08P06P Datasheet(PDF) 4 Page - Infineon Technologies AG |
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SPP08P06P Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 10 page 2009-04-14 Rev 1.5 Page 4 SPP08P06P G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Unit Values Symbol Parameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 , ID = -8.8 A - Qgs nC 2.1 1.4 Gate to drain charge VDD = -48 V, ID = -8.8 A Qgd 4 6 - 15 - Qg Gate charge total VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V 10 Gate plateau voltage VDD = -48 , ID = -8.8 A V(plateau) - -3.85 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - -8.8 A Inverse diode direct current,pulsed TC = 25 °C ISM - - -35.2 Inverse diode forward voltage VGS = 0 V, IF = -8.8 A VSD - -1.17 -1.55 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr - 60 90 ns Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs Qrr - 100 150 nC |
Similar Part No. - SPP08P06P_09 |
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Similar Description - SPP08P06P_09 |
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