IPS825-xxB

IPS825 series of silicon controlled rectifiers are

specifically designed for medium power switching and

phase control applications.

High current density due to double mesa echnology;

SIPOS and Glass passivation technology used has reliable

operation up to 125℃ junction temperature. Low Igt parts

available.

Typical applications are in rectification (softstart) and

these products are designed to be used with international

recetifier input diodes, switches and output recetifiers

which are available in identical package outlines.

Symbol

Value

Unit

25

A

800

V

≤ 1.6

V

MAIN FEATURES

Parameter

Symbol

Value

Unit

RMS on

–state current (Tc = 110℃, 180º conduction half sine wave)

25

A

Average on

–state current (Tc = 110℃, 180º conduction half sine wave)

16

A

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

Tj

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Tj = 25℃

Repetitive Peak Reverse Voltage

Tj = 25℃

800

800

V

Non Repetitive Peak Off-state Voltage

Tj = 25℃

Non Repetitive Peak Reverse Voltage

Tj = 25℃

900

900

V

One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM

applied

250

A

One cycle Non Repetitive surge current, 10ms sine pulse, no voltage

applied

260

I²t Value for fusing, 10ms sine pulse, rated VRRM applied

I²t

310

A²s

I²t Value for fusing, 10ms sine pulse, no voltage applied

320

Critical rate of rise of turned

dI/dt

100

A/us

Peak gate current

4

A

Average gate power dissipation

Tj = 125℃

1

W

ABSOLUTE MAXIMUM RATINGS

1

TO-220B

IP Semiconductor Co., Ltd.

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com