SGB02N60_06 datasheet(8/11 Pages) INFINEON

Part #	SGB02N60

Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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8 / 11 page

SGB02N60

8

Rev. 2.3

Nov 06

0nC

5nC

10nC

15nC

0V

5V

10V

15V

20V

25V

480V

120V

0V

10V

20V

30V

10pF

100pF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC = 2A)

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

10V

11V

12V

13V

14V

15V

0

µs

5

µs

10

µs

15

µs

20

µs

25

µs

10V

12V

14V

16V

18V

20V

0A

10A

20A

30A

40A

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V,Tj = 150°C)

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SGB02N60 Datasheet(PDF) 8 Page - Infineon Technologies AG

SGB02N60 Datasheet(HTML) 8 Page - Infineon Technologies AG

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