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SGB10N60A Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SGB10N60A Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 11 page SGB10N60A 6 Rev. 2.3 July 07 0A 5A 10A 15A 20A 25A 10ns 100ns t r t d(on) t f t d(off) 0 Ω 20 Ω 40 Ω 60 Ω 80 Ω 10ns 100ns t r t d(on) t f t d(o ff) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 25Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) 0°C 50°C 100°C 150°C 10ns 100ns t r t d(o n) t f t d(off) -50°C 0 °C 50°C 100°C 150 °C 1,0 V 1,5 V 2,0 V 2,5 V 3,0 V 3,5 V 4,0 V 4,5 V 5,0 V 5,5 V ty p . min . ma x . Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 25Ω, Dynamic test circuit in Figure E) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) |
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