SGB10N60A datasheet(6/11 Pages) INFINEON

Part #	SGB10N60A

Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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SGB10N60A

6

Rev. 2.3

July 07

0A

5A

10A

15A

20A

25A

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

0

Ω

20

Ω

40

Ω

60

Ω

80

Ω

10ns

100ns

t

r

t

d(on)

t

f

t

d(o ff)

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 25Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 10A,

Dynamic test circuit in Figure E)

0°C

50°C

100°C

150°C

10ns

100ns

t

r

t

d(o n)

t

f

t

d(off)

-50°C

0 °C

50°C

100°C

150 °C

1,0 V

1,5 V

2,0 V

2,5 V

3,0 V

3,5 V

4,0 V

4,5 V

5,0 V

5,5 V

ty p .

min .

ma x .

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 10A, RG = 25Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.3mA)

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SGB10N60A Datasheet(PDF) 6 Page - Infineon Technologies AG

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