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SPA21N50C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPA21N50C3
Description  Cool MOS??Power Transistor Feature New revolutionary high voltage technology
Download  14 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPA21N50C3 Datasheet(HTML) 1 Page - Infineon Technologies AG

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background image
200
9-12-22
Rev.
3.2
page 1
SPP21N50C3
SPI21N50C3, SPA21N50C3
Cool MOS™ Power Transistor
VDS @ Tjmax
560
V
RDS(on)
0.19
ID
21
A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P
G-TO220FP
P G-TO262
P
G-TO220
1
2
3
Marking
21N50C3
21N50C3
21N50C3
Type
Package
Ordering Code
SPP21N50C3
P
G-TO220
Q67040-S4565
SPI21N50C3
P
G-TO262
Q67040-S4564
SPA21N50C3
P
G-TO220FP
SP000216364
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
21
13.1
211)
13.11)
A
Pulsed drain current, tp limited by Tjmax
ID puls
63
63
A
Avalanche energy, single pulse
ID=10A, VDD=50V
EAS
690
690
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=21A, VDD=50V
EAR
1
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
21
21
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
208
34.5
W
SPP_I
Operating and storage temperature
Tj , Tstg
-55...+150
°C
Reverse diode dv/dt
dv/dt
15
V/ns
7)


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