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IRF1324SPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF1324SPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  09/24/09 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G GD S Gate Drain Source PD - 97353A IRF1324SPbF IRF1324LPbF D2Pak IRF1324SPbF TO-262 IRF1324LPbF G D S GD S Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.50 °C/W RθJA Junction-to-Ambient (PCB Mounted, steady-state) jk ––– 40 270 See Fig. 14, 15, 22a, 22b 300 0.46 A °C 300 -55 to + 175 ± 20 2.0 Max. 340 240 1420 195 VDSS 24V RDS(on) typ. 1.3m Ω max. 1.65m Ω ID (Silicon Limited) 340Ac ID (Package Limited) 195A |
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