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IRFR4615TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFR4615TRPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page IRFR/U4615PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 34 42 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 2.7 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 35 ––– ––– S Qg Total Gate Charge ––– 26 Qgs Gate-to-Source Charge ––– 8.6 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 9.0 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 17 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 35 ––– td(off) Turn-Off Delay Time ––– 25 ––– tf Fall Time ––– 20 ––– Ciss Input Capacitance ––– 1750 ––– Coss Output Capacitance ––– 155 ––– Crss Reverse Transfer Capacitance ––– 40 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)hÖ–– 179 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)g ––– 382 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 70 ––– TJ = 25°C VR = 100V, ––– 83 ––– TJ = 125°C IF = 21A Qrr Reverse Recovery Charge ––– 177 ––– TJ = 25°C di/dt = 100A/µs f ––– 247 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 4.9 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ns nC 33 140 µA nA nC ns pF A ––– ––– ––– ––– ID = 21A RG = 7.3Ω VGS = 10V f VDD = 98V ID = 21A, VDS =0V, VGS = 10V TJ = 25°C, IS = 21A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA VGS = 10V, ID = 21A f VDS = VGS, ID = 100µA VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS = 75V Conditions VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz (See Fig.5) VGS = 0V, VDS = 0V to 120V h(See Fig.11) VGS = 0V, VDS = 0V to 120V g Conditions VDS = 50V, ID = 21A ID = 21A VGS = 20V VGS = -20V |
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