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SPA20N60CFD Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPA20N60CFD
Description  CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPA20N60CFD Datasheet(HTML) 1 Page - Infineon Technologies AG

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SPA20N60CFD
CoolMOS
TM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC
0) for target applications
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
1)
I D
T C=25 °C
A
T C=100 °C
Pulsed drain current
2)
I D,pulse
T C=25 °C
Avalanche energy, single pulse
E AS
I D=10 A, V DD=50 V
690
mJ
Avalanche energy, repetitive t AR
2),3)
E AR
I D=20 A, V DD=50 V
Avalanche current, repetitive t AR
2),3)
I AR
A
Drain source voltage slope
dv /dt
I D=20.7 A,
V DS=480 V, T j=125 °C
V/ns
Reverse diode dv /dt
dv /dt
V/ns
Maximum diode commutation speed di /dt
A/µs
Gate source voltage
V GS
static
V
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
W
Operating and storage temperature
T j, T stg
°C
900
20
80
I S=20.7 A, V DS=480 V,
T j=125 °C
±20
±30
35
-55 ... +150
1
40
Value
20.7
13.1
52
V DS
600
V
R DS(on),max
0.22
I D
1)
20.7
A
Product Summary
Type
Package
Ordering Code
Marking
SPA20N60CFD
PG-TO220
FP
SP000216361
20N60CFD
PG-TO220
FP
Rev. 1.
3
page 1
200
9-12-22


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