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SPA11N60C3E8185 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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SPA11N60C3E8185 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 16 page 200 9-11-27 Rev. 3 .2 Page 8 SPP11N60C 3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -1 10 0 10 1 10 2 10 A SPP11N60C3 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 14 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 2 4 6 8 A 12 ID 0 5 10 15 20 25 30 35 40 45 50 55 60 ns 70 tr td(off) td(on) tf 15 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=11 A 0 10 20 30 40 50 Ω 70 RG 0 50 100 150 200 250 ns 350 td(off) td(on) tr tf 16 Typ. drain current slope di/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=11A 0 20 40 60 80 Ω 120 RG 0 500 1000 1500 2000 A/µs 3000 di/dt(on) di/dt(off) |
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