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IRG7PH30K10DPBF Datasheet(PDF) 4 Page - International Rectifier

Part # IRG7PH30K10DPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH30K10DPBF Datasheet(HTML) 4 Page - International Rectifier

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IRG7PH30K10DPbF
4
www.irf.com
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
02468
10
VCE (V)
0
10
20
30
40
50
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
5
101520
VGE (V)
0
2
4
6
8
10
12
ICE = 4.5A
ICE = 9.0A
ICE = 18A
5
101520
VGE (V)
0
2
4
6
8
10
12
ICE = 4.5A
ICE = 9.0A
ICE = 18A
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
0
10
20
30
40
TJ = 25°C
TJ = 150°C
5
101520
VGE (V)
0
2
4
6
8
10
12
ICE = 4.5A
ICE = 9.0A
ICE = 18A
0.0
1.0
2.0
3.0
4.0
5.0
VF (V)
0
10
20
30
40
50
-40°C
25°C
150°C


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