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IRG7PH35UD1PBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRG7PH35UD1PBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH35UD1PBF Datasheet(HTML) 5 Page - International Rectifier

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IRG7PH35UD1PbF/IRG7PH35UD1-EP
www.irf.com
5
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 20A; L = 2.4mH
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 680µH; VCE= 600V, RG = 10Ω; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0
100
200
300
400
500
600
VCE (V)
10
100
1000
10000
Cies
Coes
Cres
0
20406080
100
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES = 600V
VCES = 400V
0
25
50
75
100
125
Rg (
Ω)
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
EOFF
0
20
40
60
80
100
120
RG (Ω)
10
100
1000
10000
tdOFF
tF
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
0
1020
304050
IC (A)
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
EOFF
0
10
20
30
40
IC (A)
10
100
1000
tdOFF
tF


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