BSC035N04LSG datasheet(3/10 Pages) INFINEON

Part #	BSC035N04LSG

Description	OptiMOS3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC035N04LS G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

3800

5100

pF

Output capacitance

C oss

-

820

1100

Reverse transfer capacitance

Crss

-44-

Turn-on delay time

t d(on)

-

7.9

-

ns

Rise time

t r

-

4.6

-

Turn-off delay time

t d(off)

-31-

Fall time

t f

-

5.0

-

Gate Charge Characteristics

5)

Gate to source charge

Q gs

-12-

nC

Gate charge at threshold

Q g(th)

-

6.1

-

Gate to drain charge

Q gd

-

5.0

-

Switching charge

Q sw

-11-

Gate charge total

Q g

-48

64

Gate plateau voltage

V plateau

-

3.1

-

V

Gate charge total

Q g

V DD=20 V, I D=30 A,

V GS=0 to 4.5 V

-23

31

nC

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 10 V

-45-

Output charge

Q oss

V DD=20 V, V GS=0 V

-31-

Reverse Diode

Diode continuous forward current

I S

-

58

A

Diode pulse current

I S,pulse

-

400

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

-

0.84

1.2

V

Reverse recovery charge

Q rr

V R=20 V, I F=I S,

di F/dt =400 A/µs

-35-

nC

5) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=20 V,

f =1 MHz

V DD=20 V, V GS=10 V,

I D=30 A, R G=1.6 Ω

V DD=20 V, I D=30 A,

V GS=0 to 10 V

Rev. 1.04

page 3

2009-10-20

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