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SPA20N65C3 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SPA20N65C3 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 15 page 200 9-12-01 Rev. 3. 1 Page 7 SPP20N65C3, SPA20N65C3 SPI20N65C3 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 SPP20N65C3 typ 98% 10 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 V 9 VGS 0 10 20 30 40 50 60 A 80 150°C 25°C 12 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -1 10 0 10 1 10 2 10 A SPP20N65C3 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 11 Typ. gate charge VGS = f (QGate) parameter: ID = 20.7 A pulsed 0 20 40 60 80 100 nC 140 QGate 0 2 4 6 8 10 12 V 16 SPP20N65C3 0,8 VDS max DS max V 0,2 |
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