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SPA20N65C3 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # SPA20N65C3
Description  New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPA20N65C3 Datasheet(HTML) 7 Page - Infineon Technologies AG

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200
9-12-01
Rev. 3.
1
Page 7
SPP20N65C3, SPA20N65C3
SPI20N65C3
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
-60
-20
20
60
100
°C
180
Tj
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
SPP20N65C3
typ
98%
10 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: tp = 10 µs
0
1
2
3
4
5
6
7
V
9
VGS
0
10
20
30
40
50
60
A
80
150°C
25°C
12 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
VSD
-1
10
0
10
1
10
2
10
A
SPP20N65C3
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
11 Typ. gate charge
VGS = f (QGate)
parameter: ID = 20.7 A pulsed
0
20
40
60
80
100
nC
140
QGate
0
2
4
6
8
10
12
V
16
SPP20N65C3
0,8 VDS max
DS max
V
0,2


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