SPD30P06P_08 datasheet(6/10 Pages) INFINEON

Part #	SPD30P06P

Description	SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 10 page

2008-09-02

Rev 2.3

Page 6

SPD30P06P G

Typ. drain-source-on-resistance

RDS(on) = f (ID)

parameter:

VGS

0

-10

-20

-30

-40

A

-60

ID

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

W

0.26

SPD30P06P

c

VGS [V] =

c

-5.0

d

-5.5

e

-6.0

f

-6.5

g

-7.0

h

-7.5

i

-8.0

j

-9.0

k

-10.0

Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter:

tp = 80 µs

0

-2

-4

-6

-8

-10

V

-13

VDS

0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

-55

-60

A

-75

SPD30P06P

VGS [V]

a

-4.0

b

-4.5

c

-5.0

d

-5.5

e

-6.0

f

-6.5

g

-7.0

h

-7.5

i

-8.0

j

-9.0

k

Ptot = 125.00W

k

-10.0

Typ. transfer characteristics

ID= f ( VGS )

VDS³ 2 x ID x RDS(on)max

parameter:

tp = 80 µs

0

-1

-2

-3

-4

-5

-6

-7

-8

V

-10

VGS

0

-10

-20

-30

-40

A

-60

Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter:

gfs

0

-1

-2

-3

-4

-5

-6

-7

-8

A

-10

ID

0

1

2

3

4

5

6

7

8

9

10

11

S

13

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