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SPD30P06PG Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPD30P06PG
Description  SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPD30P06PG Datasheet(HTML) 1 Page - Infineon Technologies AG

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2008-09-02
Rev 2.3
Page 1
SPD30P06P G
SIPMOS® Power-Transistor
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating temperature
Product Summary
Drain source voltage
V
VDS
-60
Drain-source on-state resistance
RDS(on)
0.075
W
Continuous drain current
A
ID
-30
Type
Package
SPD30P06P G
PG-TO252-3
Pin 1
PIN 2/4
PIN 3
G
D
S
Maximum Ratings,at
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Unit
Value
-30
-21.5
A
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
-120
Avalanche energy, single pulse
ID = -30 A , VDD = -25 V, RGS = 25 W
250
mJ
EAS
Avalanche energy, periodic limited by
Tjmax
EAR
12.5
d
v/dt
6
Reverse diode d
v/dt
IS = -30 A, VDS = -48 V, di/dt = 200 A/µs,
Tjmax = 175 °C
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC = 25 °C
Ptot
125
W
Operating and storage temperature
Tj , Tstg
-55...+175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
° Pb-free lead plating; RoHS compliat


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