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IPF075N03LG Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPF075N03LG
Description  OptiMOS Power-Transistor
Download  12 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPF075N03LG Datasheet(HTML) 1 Page - Infineon Technologies AG

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Type
IPD075N03L G
IPF075N03L G
IPS075N03L G
IPU075N03L G
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
V GS=10 V, T C=25 °C
50
A
V GS=10 V, T C=100 °C
43
V GS=4.5 V, T C=25 °C
49
V GS=4.5 V,
T C=100 °C
35
Pulsed drain current
2)
I D,pulse
T C=25 °C
350
Avalanche current, single pulse
3)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=12 A, R GS=25 Ω
50
mJ
Gate source voltage
V GS
±20
V
Value
1) J-STD20 and JESD22
V DS
30
V
R DS(on),max
7.5
m
Ω
I D
50
A
Product Summary
Type
IPD075N03L G
IPF075N03L G
IPS075N03L G
IPU075N03L G
Package
PG-TO252-3-11
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3-21
Marking
075N03L
075N03L
075N03L
075N03L
Rev. 1.1
page 1
2009-01-14


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