IPB12CNE8N_07 datasheet(2/12 Pages) INFINEON

Part #	IPB12CNE8N

Description	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB12CNE8N G

IPD12CNE8N G

IPI12CNE8N G

IPP12CNE8N G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

-

1.2

K/W

R

thJA

minimal footprint

-

62

6 cm2 cooling area

4)

--

40

minimal footprint

-

75

6 cm2 cooling area

4)

--

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS=0 V, I D=1 mA

85

-

V

Gate threshold voltage

V

GS(th)

V

DS=V GS, I D=83 μA

234

Zero gate voltage drain current

I

DSS

V

DS=68 V, V GS=0 V,

T

j=25 °C

-

0.1

1

μA

V

DS=68 V, V GS=0 V,

T

j=125 °C

-

10

100

Gate-source leakage current

I

GSS

V

GS=20 V, V DS=0 V

-

1

100

nA

Drain-source on-state resistance

R

DS(on)

V

GS=10 V, I D=67 A,

(TO252)

-

9.2

12.4

m

V

GS=10 V, I D=67 A,

(TO262)

-

9.4

12.6

V

GS=10 V, I D=67 A,

(TO220, TO263)

-

9.7

12.9

Gate resistance

R

G

-

1.5

-

Transconductance

g

fs

|V DS|>2|I D|R DS(on)max,

I

D=67 A

39

77

-

S

Values

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is

vertical in still air.

Thermal resistance, junction -

ambient (TO220, TO262, TO263)

Thermal resistance, junction -

ambient (TO252)

Rev. 1.05

page 2

2007-08-29

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