IPW50R299CP datasheet(4/11 Pages) INFINEON

Part #	IPW50R299CP

Description	CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPW50R299CP

1 Power dissipation

2 Safe operating area

P tot=f(T C)

I D=f(V DS); T C=25 °C; D =0

parameter: t p

3 Max. transient thermal impedance

4 Typ. output characteristics

Z(thJC)=f(tp);

I D=f(V DS); T j=25 °C

parameter: D=t p/T

parameter: V GS

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

T C [°C]

1 µs

10 µs

100 µs

1 ms

10 ms

DC

10

3

10

2

10

1

10

0

10

2

10

1

10

0

10

-1

V DS [V]

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10

-1

10

-2

10

-3

10

-4

10

-5

10

1

10

0

10

-1

10

-2

t p [s]

4.5 V

5 V

5.5 V

6 V

7 V

8 V

10 V

20 V

0

5

10

15

20

25

30

0

5

10

15

20

V DS [V]

limited by on-state

resistance

Rev. 2.0

page 4

2007-11-07

Please note the new package dimensions arccording to PCN 2009-134-A

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IPW50R299CP Datasheet(PDF) 4 Page - Infineon Technologies AG

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