IPD800N06NG_08 datasheet(1/9 Pages) INFINEON

Part #	IPD800N06NG

Description	OptiMOS짰 Power-Transistor Features For fast switching converters and sync. rectification

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IPD800N06N G

OptiMOS® Power-Transistor

Features

• For fast switching converters and sync. rectification

• N-channel enhancement - normal level

• 175 °C operating temperature

• Avalanche rated

• Pb-free lead plating, RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

16

A

T C=100 °C

11

Pulsed drain current

I D,pulse

T C=25 °C

1)

64

Avalanche energy, single pulse

E AS

I D=16 A, R GS=25 Ω

43

mJ

Reverse diode dv /dt

dv /dt

I D=16 A, V DS=48 V,

di /dt =200 A/µs,

T j,max=175 °C

6

kV/µs

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

47

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

1) See figure 3

V DS

60

V

R DS(on),max

80

m

Ω

I D

16

A

Product Summary

Type

IPD800N06N G

Package

P

G-TO252-3

Marking

800N06N

Rev.1.

3

page 1

2008-0

9-01

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