IPD640N06LG_08 datasheet(3/9 Pages) INFINEON

Part #	IPD640N06LG

Description	OptiMOS짰 Power-Transistor Features For fast switching converters and sync. rectification

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD640N06L G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

350

470

pF

Output capacitance

C oss

-

94

130

Reverse transfer capacitance

C rss

-35

53

Turn-on delay time

t d(on)

-6

8

ns

Rise time

t r

-25

38

Turn-off delay time

t d(off)

-32

48

Fall time

t f

-32

48

Gate Charge Characteristics

3)

Gate to source charge

Q gs

-

1.4

1.9

nC

Gate charge at threshold

Q g(th)

-

0.5

0.7

Gate to drain charge

Q gd

-

3.6

5.4

Switching charge

Q sw

-

4.5

6.5

Gate charge total

Q g

-10

13

Gate plateau voltage

V plateau

-

4.2

-

V

Output charge

Q oss

V DD=30 V, V GS=0 V

-3

4

Reverse Diode

Diode continous forward current

I S

-

18

A

Diode pulse current

I S,pulse

--

72

Diode forward voltage

V SD

V GS=0 V, I F=18 A,

T j=25 °C

-

0.99

1.3

V

Reverse recovery time

t rr

-30

45

ns

Reverse recovery charge

Q rr

-20

30

nC

3) See figure 16 for gate charge parameter definition

V R=30 V, I F=I S,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=30 V,

f =1 MHz

V DD=30 V, V GS=10 V,

I D=15 A, R G=22 Ω

V DD=30 V, I D=18 A,

V GS=0 to 10 V

Rev. 1.

4

page 3

2008-0

9-01

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