BSL205N datasheet(2/9 Pages) INFINEON

Part #	BSL205N

Description	OptiMOS2 Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 9 page

BSL205N

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - ambient

R thJA

minimal footprint

(2)

-

250

K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS= 0 V, I D= 250 µA

20

-

V

Gate threshold voltage

V GS(th)

V DS=VGS, I D=11 µA

0.6

0.95

1.2

Drain-source leakage current

I DSS

V DS=20 V, V GS=0 V,

T j=25 °C

--

1

µA

V DS=20 V, V GS=0 V,

T j=150 °C

-

100

Gate-source leakage current

I GSS

V GS=12 V, V DS=0 V

-

100

nA

Drain-source on-state resistance

R DS(on)

V GS=2.5 V, I D=1.95 A

-62

85

m

Ω

V GS=4.5 V, I D=2.5 A

-39

50

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=2 A

-

8.6

-

S

Values

(2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mkm long; they are present on both

sides of the PCB.

Rev 2.2

page 2

2010-03-26

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