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IPP040N06N3G Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPP040N06N3G Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 11 page IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.8 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm² cooling area 4) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 234 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=90 A - 3.3 4 m Ω V GS=10 V, I D=90 A, (SMD) - 3.0 3.7 Gate resistance R G - 1.3 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=90 A 61 121 - S Values Rev. 1.03 page 2 2009-12-17 |
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