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SGB07N120 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SGB07N120
Description  Fast IGBT in NPT-technology lower Eoff compared to previous generation
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGB07N120 Datasheet(HTML) 3 Page - Infineon Technologies AG

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SGB07N120
Power Semiconductors
3
Rev. 2_2
Apr 07
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
27
35
Rise time
tr
-
29
38
Turn-off delay time
td(off)
-
440
570
Fall time
tf
-
21
27
ns
Turn-on energy
Eon
-
0.6
0.8
Turn-off energy
Eoff
-
0.4
0.55
Total switching energy
Ets
Tj=25°C,
VCC=800V,IC=8A,
VGE=15V/0V,
RG=47Ω,
Lσ
1) =180nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
1.0
1.35
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
30
36
Rise time
tr
-
26
31
Turn-off delay time
td(off)
-
490
590
Fall time
tf
-
30
36
ns
Turn-on energy
Eon
-
1.0
1.2
Turn-off energy
Eoff
-
0.7
0.9
Total switching energy
Ets
Tj=150°C
VCC=800V,
IC=8A,
VGE=15V/0V,
RG=47Ω,
Lσ
1) =180nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
1.7
2.1
mJ
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.


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