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BTS5235-2L Datasheet(PDF) 10 Page - Infineon Technologies AG |
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BTS5235-2L Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 25 page Smart High-Side Power Switch BTS5235-2L Block Description and Electrical Characteristics Data Sheet 10 Rev.1.1, 2008-09-01 5 Block Description and Electrical Characteristics 5.1 Power Stages The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge pumps. 5.1.1 Output On-State Resistance The on-state resistance R DS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described in Section 6.2. Figure 4 Typical On-State Resistance 5.1.2 Input Circuit Figure 5 shows the input circuit of the BTS5235-2L. There is an integrated input resistor that makes external components obsolete. The current sink to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. Figure 5 Input Circuit (IN1 and IN2) 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 T / °C 40 60 80 100 120 140 160 0 5 10 15 20 25 Vbb /V Vbb = 13.5 V Tj = 25 °C IN RIN IIN GND RGND Input.emf |
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