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IPI111N15N3G Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPI111N15N3G Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 11 page IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=83 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98% 0 5 10 15 20 25 30 35 -60 -20 20 60 100 140 180 T j [°C] 160 µA 1600 µA 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 10 1 10 2 10 3 10 4 0 2040 6080 100 V DS [V] 25 °C 175 °C 25°C, 98% 175°C, 98% 10 0 10 1 10 2 10 3 0 0.5 1 1.5 2 V SD [V] Rev. 2.1 page 6 2009-12-01 |
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