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BTS5236-2EKA Datasheet(PDF) 9 Page - Infineon Technologies AG |
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BTS5236-2EKA Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 27 page Smart High-Side Power Switch BTS5236-2EKA Electrical Characteristics Datasheet 9 Rev. 1.0, 2008-11-26 Temperatures 3.1.13 Junction Temperature T j -40 150 °C 3.1.14 Dynamic temperature increase while switching ΔTj –60 °C 3.1.15 Storage Temperature T stg -55 150 °C ESD Susceptibility 3.1.16 ESD susceptibility HBM6) IN, SEN IS OUT V ESD -1 -2 -4 1 2 4 kV 1) R and L describe the complete circuit impedance including line, contact and generator impedances. 2) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator. 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse. 5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 μm thick) for Vbb connection. PCB is vertical without blown air. 6) According to AEC Q100, specific user approval is required for device level < 2kV HBM. Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Unless otherwise specified: T j = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. max. |
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