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IPP600N25N3G Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPP600N25N3G Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 11 page IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.1 K/W R thJA minimal footprint - - 62 6 cm2 cooling area 3) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 250 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 234 Zero gate voltage drain current I DSS V DS=200 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=200 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=25 A -51 60 m Ω Gate resistance R G - 2.5 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=25 A 24 47 - S Values Thermal resistance, junction - ambient 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2009-10-23 |
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