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IPP600N25N3G Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # IPP600N25N3G
Description  OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP600N25N3G Datasheet(HTML) 2 Page - Infineon Technologies AG

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IPB600N25N3 G
IPP600N25N3 G
IPI600N25N3 G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
1.1
K/W
R thJA
minimal footprint
-
-
62
6 cm2 cooling area
3)
--
40
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
250
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90 µA
234
Zero gate voltage drain current
I DSS
V DS=200 V, V GS=0 V,
T j=25 °C
-
0.1
1
µA
V DS=200 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=25 A
-51
60
m
Ω
Gate resistance
R G
-
2.5
-
Ω
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=25 A
24
47
-
S
Values
Thermal resistance, junction -
ambient
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-10-23


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