SGP02N120 datasheet(7/13 Pages) INFINEON

Part #	SGP02N120

Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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SGP02N120

SGD02N120,

SGI02N120

Power Semiconductors

7

Rev. 2.3

Sep. 07

0A

2A

4A

6A

8A

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

E

on*

E

off

E

ts*

0

Ω

50

Ω

100

Ω

150

Ω

0.0mJ

0.1mJ

0.2mJ

0.3mJ

0.4mJ

0.5mJ

E

ts*

E

on*

E

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 91Ω,

dynamic test circuit in Fig.E )

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 2A,

dynamic test circuit in Fig.E )

-50°C

0°C

50°C

100°C

150°C

0.0mJ

0.1mJ

0.2mJ

0.3mJ

0.4mJ

E

ts*

E

on*

E

off

1µs

10µs

100µs

1ms

10ms 100ms

1s

10

-2K/W

10

-1K/W

10

0K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

Tj, JUNCTION TEMPERATURE

tp, PULSE WIDTH

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 2A, RG = 91Ω,

dynamic test circuit in Fig.E )

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

C1=

τ1/R1

R1

R2

C2=

τ2/R2

R

,( K/ W )

τ , (s )

0.66735

0.04691

0.70472

0.00388

0.62778

0.00041

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SGP02N120 Datasheet(PDF) 7 Page - Infineon Technologies AG

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