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SGP02N120 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SGP02N120 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 13 page SGP02N120 SGD02N120, SGI02N120 Power Semiconductors 7 Rev. 2.3 Sep. 07 0A 2A 4A 6A 8A 0.0mJ 0.5mJ 1.0mJ 1.5mJ 2.0mJ E on* E off E ts* 0 Ω 50 Ω 100 Ω 150 Ω 0.0mJ 0.1mJ 0.2mJ 0.3mJ 0.4mJ 0.5mJ E ts* E on* E off IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 91Ω, dynamic test circuit in Fig.E ) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E ) -50°C 0°C 50°C 100°C 150°C 0.0mJ 0.1mJ 0.2mJ 0.3mJ 0.4mJ E ts* E on* E off 1µs 10µs 100µs 1ms 10ms 100ms 1s 10 -2K/W 10 -1K/W 10 0K/W 0.01 0.02 0.05 0.1 0.2 single pulse D=0.5 Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 91Ω, dynamic test circuit in Fig.E ) Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. C1= τ1/R1 R1 R2 C2= τ2/R2 R ,( K/ W ) τ , (s ) 0.66735 0.04691 0.70472 0.00388 0.62778 0.00041 |
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