SGP02N120 datasheet(2/13 Pages) INFINEON

Part #	SGP02N120

Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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SGP02N120

SGD02N120,

SGI02N120

Power Semiconductors

2

Rev. 2.3

Sep. 07

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

RthJC

2.0

Thermal resistance,

junction – ambient

RthJA

PG-TO-220-3-1

PG-TO-262-3-1

62

SMD version, device on PCB

1)

RthJA

PG-TO-252-3-11

50

K/W

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V, IC=100µA

1200

-

Collector-emitter saturation voltage

VCE(sat)

VGE = 15V, IC=2A

Tj=25°C

Tj=150°C

2.5

-

3.1

3.7

3.6

4.3

Gate-emitter threshold voltage

VGE(th)

IC=100µA,VCE=VGE

3

4

5

V

Zero gate voltage collector current

ICES

VCE=1200V,VGE=0V

Tj=25°C

Tj=150°C

-

25

100

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V, IC=2A

1.5

-

S

Dynamic Characteristic

Input capacitance

Ciss

-

205

250

Output capacitance

Coss

-

20

25

Reverse transfer capacitance

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

12

14

pF

Gate charge

QGate

VCC=960V, IC=2A

VGE=15V

-

11

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE

-

7

-

nH

Short circuit collector current

2)

IC(SC)

VGE=15V,tSC≤10µs

100V

≤VCC≤1200V,

Tj ≤ 150°C

-

24

-

A

1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

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