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SGP02N120 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SGP02N120 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 13 page SGP02N120 SGD02N120, SGI02N120 Power Semiconductors 2 Rev. 2.3 Sep. 07 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 2.0 Thermal resistance, junction – ambient RthJA PG-TO-220-3-1 PG-TO-262-3-1 62 SMD version, device on PCB 1) RthJA PG-TO-252-3-11 50 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=100µA 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=2A Tj=25°C Tj=150°C 2.5 - 3.1 3.7 3.6 4.3 Gate-emitter threshold voltage VGE(th) IC=100µA,VCE=VGE 3 4 5 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tj=25°C Tj=150°C - - - - 25 100 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V, IC=2A 1.5 - S Dynamic Characteristic Input capacitance Ciss - 205 250 Output capacitance Coss - 20 25 Reverse transfer capacitance Crss VCE=25V, VGE=0V, f=1MHz - 12 14 pF Gate charge QGate VCC=960V, IC=2A VGE=15V - 11 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7 - nH Short circuit collector current 2) IC(SC) VGE=15V,tSC≤10µs 100V ≤VCC≤1200V, Tj ≤ 150°C - 24 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. |
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