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SKW10N60A Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # SKW10N60A
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKW10N60A Datasheet(HTML) 9 Page - Infineon Technologies AG

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SKP10N60A
SKW10N60A
9
Rev. 2.3
Sep 08
100A/
µs 300A/µs500A/µs700A/µs 900A/µs
0ns
100ns
200ns
300ns
400ns
500ns
I
F = 5A
I
F = 1 0 A
I
F = 2 0 A
100A/
µs300A/µs500A/µs700A/µs900A/µs
0nC
200nC
400nC
600nC
800nC
1000nC
1200nC
1400nC
I
F = 5A
I
F = 10 A
I
F = 2 0 A
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)
1 00A /
µs30 0A /µs 500 A /µs 700A /µs 900A /µs
0A
4A
8A
12 A
16 A
20 A
I
F = 5A
I
F = 20A
I
F = 10A
100A /
µs300A/µs500A /µs700A /µs
900A /
µs
0A /
µs
200A /
µs
400A /
µs
600A /
µs
800A /
µs
1000A /
µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)


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