SKW20N60HS datasheet(4/14 Pages) INFINEON

Part #	SKW20N60HS

Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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SKW20N60HS

Power Semiconductors

4

Rev. 2.3

Sep 08

Switching Characteristic, Inductive Load, at Tj=150

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

15

Rise time

tr

-

8.5

Turn-off delay time

td(off)

-

65

Fall time

tf

-

35

ns

Turn-on energy

Eon

-

0.46

Turn-off energy

Eoff

-

0.24

Total switching energy

Ets

Tj=150

°C

VCC=400V,IC=20A,

VGE=0/15V,

RG= 2.2Ω

Lσ

1) =60nH,

Cσ

1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

-

0.7

mJ

Turn-on delay time

td(on)

-

17

Rise time

tr

-

13

Turn-off delay time

td(off)

-

222

Fall time

tf

-

13

ns

Turn-on energy

Eon

-

0.6

Turn-off energy

Eoff

-

0.36

Total switching energy

Ets

Tj=150

°C

VCC=400V,IC=20A,

VGE=0/15V,

RG= 16Ω

Lσ

1) =60nH,

Cσ

1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

-

0.96

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

tS

tF

-

200

25

175

ns

Diode reverse recovery charge

Qrr

-

1500

nC

Diode peak reverse recovery current

Irrm

-

21

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=150

°C

VR=400V, IF=20A,

diF/dt=1250A/

µs

-

410

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.

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