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SPB02N60S5 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPB02N60S5 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page 200 7-02-14 Rev. 2. 4 Page 3 SPB02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=1.1A - 1.4 - S Input capacitance Ciss VGS=0V, VDS=25V, f =1MHz - 240 - pF Output capacitance Coss - 77 - Reverse transfer capacitance Crss - 4.4 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=1.8A, RG=50Ω - 35 - ns Rise time tr - 35 - Turn-off delay time td(off) - 35 42 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=1.8A - 2.3 - nC Gate to drain charge Qgd - 4.5 - Gate charge total Qg VDD=350V, ID=1.8A, VGS=0 to 10V - 7.3 9.5 Gate plateau voltage V(plateau) VDD=350V, ID=1.8A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. |
Similar Part No. - SPB02N60S5_07 |
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Similar Description - SPB02N60S5_07 |
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